<?xml version="1.0" encoding="UTF-8"?><?xml-stylesheet type="text/xsl" href="static/style.xsl"?><OAI-PMH xmlns="http://www.openarchives.org/OAI/2.0/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/ http://www.openarchives.org/OAI/2.0/OAI-PMH.xsd"><responseDate>2026-09-25T00:57:03Z</responseDate><request verb="GetRecord" identifier="oai:www.repository.cam.ac.uk:1810/374109" metadataPrefix="uketd_dc">https://api.repository.cam.ac.uk/server/oai/request</request><GetRecord><record><header><identifier>oai:www.repository.cam.ac.uk:1810/374109</identifier><datestamp>2024-10-03T00:43:45Z</datestamp><setSpec>com_1810_34586</setSpec><setSpec>com_1810_256064</setSpec><setSpec>col_1810_205358</setSpec></header><metadata><uketd_dc:uketddc xmlns:uketd_dc="http://naca.central.cranfield.ac.uk/ethos-oai/2.0/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:dcterms="http://purl.org/dc/terms/" xmlns:uketdterms="http://naca.central.cranfield.ac.uk/ethos-oai/terms/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:doc="http://www.lyncode.com/xoai" xsi:schemaLocation="http://naca.central.cranfield.ac.uk/ethos-oai/2.0/ http://naca.central.cranfield.ac.uk/ethos-oai/2.0/uketd_dc.xsd">
   <dc:title>Photoluminescence from Defects in Two-Dimensional Transition Metal Dichalcogenides</dc:title>
   <dc:identifier xsi:type="dcterms:DOI">https://doi.org/10.17863/CAM.112297</dc:identifier>
   <dc:creator>Zhu, Yiru</dc:creator>
   <uketdterms:advisor>Chhowalla, Manish</uketdterms:advisor>
   <dcterms:abstract>Atomic defects in monolayer transition metal dichalcogenides (TMDs) such as chalcogen vacancies significantly affect their properties. In this thesis, I provide a reproducible and facile strategy to rationally induce chalcogen vacancies in monolayer MoS&lt;sub>2&lt;/sub> by annealing at 600 °C in an argon/hydrogen (95 vol.%/5 vol.%) atmosphere. At sulfur vacancy densities of ~1.8×10&lt;sup>14&lt;/sup> cm&lt;sup>−2&lt;/sup>, I observe defect-mediated photoluminescence (PL) at ~1.72 eV (referred to as LX&lt;sub>D&lt;/sub>) at room temperature. The LX&lt;sub>D&lt;/sub> emission is attributed to excitons trapped at defect-induced in-gap states and is typically observed only at low temperatures (≤77 K). Time-resolved PL measurements reveal that the lifetime of defect-mediated LX&lt;sub>D&lt;/sub> emission is longer than band edge excitons, both at room and low temperatures (~2.44 ns at 8 K). My results provide insight into how excitonic and defect-mediated PL emission in MoS&lt;sub>2&lt;/sub> are influenced by sulfur vacancies at room and low temperatures. 

I also show that the LX&lt;sub>D&lt;/sub> peak can be suppressed by annealing the defective MoS&lt;sub>2&lt;/sub> in sulfur or selenium vapor, which indicates that it is possible to passivate the vacancies. At annealing temperatures ≥600 °C in selenium vapor, I observed the filling of sulfur vacancies by selenium. 

I extended the defect generation strategy to monolayer MoS&lt;sub>2&lt;/sub> on various dielectric substrates to investigate the influence of dielectric substrates on defect-mediated emission. The LX&lt;sub>D&lt;/sub> emission after annealing was observed on SiO&lt;sub>2&lt;/sub> and hBN, but not on HfO&lt;sub>2&lt;/sub>. When the MoS&lt;sub>2&lt;/sub> is first annealed on SiO&lt;sub>2&lt;/sub> and then transferred onto HfO&lt;sub>2&lt;/sub>, the LX&lt;sub>D&lt;/sub> emission is present on untreated HfO&lt;sub>2&lt;/sub>, but not on annealed HfO&lt;sub>2&lt;/sub>. These results suggest that surface states in dielectric substrates can influence the defect-mediated emission.</dcterms:abstract>
   <uketdterms:institution>University of Cambridge</uketdterms:institution>
   <dcterms:issued>2024-03-30</dcterms:issued>
   <dc:type>Thesis</dc:type>
   <uketdterms:qualificationlevel>Doctoral</uketdterms:qualificationlevel>
   <uketdterms:qualificationname>Doctor of Philosophy (PhD)</uketdterms:qualificationname>
   <dc:language>eng</dc:language>
   <dcterms:isReferencedBy xsi:type="dcterms:URI">https://www.repository.cam.ac.uk/handle/1810/374109</dcterms:isReferencedBy>
   <dcterms:license>https://apollo8-f-pro.lib.cam.ac.uk/bitstreams/22cbeee4-d36f-4553-add2-54fe7cab4326/download</dcterms:license>
   <uketdterms:checksum xsi:type="uketdterms:MD5">87eda9de84448d1f82354d60eee3eb5f</uketdterms:checksum>
   <dc:identifier xsi:type="dcterms:URI">https://apollo8-f-pro.lib.cam.ac.uk/bitstreams/eedc9bdc-919e-45c2-bc90-73b064695c52/download</dc:identifier>
   <uketdterms:checksum xsi:type="uketdterms:MD5">b1d41e3267599a4dfb3d1c96803ffd4e</uketdterms:checksum>
   <dc:rights>https://www.rioxx.net/licenses/all-rights-reserved/</dc:rights>
   <dc:subject>Defect</dc:subject>
   <dc:subject>Photoluminescence</dc:subject>
   <dc:subject>Two-Dimensional Transition Metal Dichalcogenides</dc:subject>
</uketd_dc:uketddc>
</metadata></record></GetRecord></OAI-PMH>