<?xml version="1.0" encoding="UTF-8"?><?xml-stylesheet type="text/xsl" href="static/style.xsl"?><OAI-PMH xmlns="http://www.openarchives.org/OAI/2.0/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/ http://www.openarchives.org/OAI/2.0/OAI-PMH.xsd"><responseDate>2026-09-24T03:13:36Z</responseDate><request verb="GetRecord" identifier="oai:www.repository.cam.ac.uk:1810/350831" metadataPrefix="uketd_dc">https://api.repository.cam.ac.uk/server/oai/request</request><GetRecord><record><header><identifier>oai:www.repository.cam.ac.uk:1810/350831</identifier><datestamp>2025-12-19T18:13:29Z</datestamp><setSpec>com_1810_198332</setSpec><setSpec>com_1810_256064</setSpec><setSpec>col_1810_214775</setSpec></header><metadata><uketd_dc:uketddc xmlns:uketd_dc="http://naca.central.cranfield.ac.uk/ethos-oai/2.0/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:dcterms="http://purl.org/dc/terms/" xmlns:uketdterms="http://naca.central.cranfield.ac.uk/ethos-oai/terms/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:doc="http://www.lyncode.com/xoai" xsi:schemaLocation="http://naca.central.cranfield.ac.uk/ethos-oai/2.0/ http://naca.central.cranfield.ac.uk/ethos-oai/2.0/uketd_dc.xsd">
   <dc:title>Mixed Lead-Tin Halide Perovskites for Optoelectronic Applications</dc:title>
   <dc:identifier xsi:type="dcterms:DOI">https://doi.org/10.17863/CAM.97120</dc:identifier>
   <dc:creator>Dey, Krishanu</dc:creator>
   <uketdterms:authoridentifier xsi:type="uketdterms:ORCID">0000000334696184</uketdterms:authoridentifier>
   <uketdterms:advisor>Stranks, Sam</uketdterms:advisor>
   <dcterms:abstract>Mixed lead-tin (Pb-Sn) perovskites are unique materials in the family of halide
perovskites. Unlike Pb perovskites, these mixed-metal systems can demonstrate
bandgaps below 1.3 eV and are therefore essential constituents for low bandgap
bottom subcell in all-perovskite tandem solar cells as well as for near-infrared light
emitting diodes (LEDs), lasers and photodetectors. Although the air stability of these
Sn-containing perovskites are relatively poor due to the facile oxidation of Sn2+ to Sn4+,
these materials do possess certain bright aspects in their optoelectronic properties
which have received less attention in the community and this forms the foundation of
this thesis.

Chapter 1 provides a bigger picture of the need to explore sustainable
alternatives to energy generation and consumption and the role of emerging
semiconductor materials, especially metal halide perovskites, in that pursuit. Chapter
2 provides a general background to semiconductors and outlines the operating
principles of solar cells and FETs. It also presents the current understanding of the
optoelectronic properties and degradation mechanisms of mixed Pb-Sn halide
perovskites. All the experimental techniques used in the thesis are introduced in
Chapter 3.

Chapter 4 summarises the optimization strategies of mixed Pb-Sn halide
perovskite systems for demonstrating reliable and hysteresis-free p-type perovskite
FETs with high hole mobility reaching 5.4 cm2/Vs and ON/OFF ratio approaching 106,
which are among the best metrics in the field of perovskite FETs. We also rationalize
these findings of long-range lateral transport with the support of theoretical calculations, film morphology studies and chemical analysis of defects in these
materials.

We then extend the above work to probe the lateral charge transport
mechanism in mixed Pb-Sn perovskite FETs in Chapter 5. Through temperature-dependent
field-effect mobility measurements, aided further with photoluminescence
microscopy under bias, we show that ionic screening effects are greatly suppressed
in mixed Pb-Sn devices when compared to their Pb-based analogues. We also
demonstrate that dipolar disorder (associated with methylammonium, MA+ cation)
induced lowering of FET mobility near room temperature can also be seen for mixed
Pb-Sn perovskites and hence further efforts need to be invested in going MA-free in
future.

Next, we generalize the above findings of suppressed ion dynamics in mixed
Pb-Sn systems by fabricating optoelectronic device stacks with vertical charge
transport in Chapter 6, which are relevant for solar cells and LEDs. We reconcile these
findings through first principles calculations, which reveal the key role played by Sn
vacancies (with low formation energy) in increasing the migration barrier for iodides
due to severe local structural distortion in the lattice.

In Chapter 7, we show that the partial or complete incorporation of Sn in the
metal (B) site of mixed halide perovskites offer very promising intrinsic stability to
halide segregation under a host of processing and operational conditions. We further
study the optoelectronic properties of these mixed halide Pb-Sn perovskites to
understand the impact of light soaking on the charge carrier recombination and
transport in these materials. We also assess the device performance of these mixed
halide perovskite materials by fabricating single single junction solar cells.

Chapter 8 summarises the key findings of this thesis and proposes several
potential directions of research involving these mixed Pb-Sn perovskites.

All the work presented herein provides an important advance to the
fundamental understanding and applied device integration of mixed lead-tin perovskite
materials and can be leveraged for demonstrating a ‘perovskite optoelectronic
universe’ with high performance and stability.</dcterms:abstract>
   <uketdterms:institution>University of Cambridge</uketdterms:institution>
   <dcterms:issued>2022-11-01</dcterms:issued>
   <dc:type>Thesis</dc:type>
   <uketdterms:qualificationlevel>Doctoral</uketdterms:qualificationlevel>
   <uketdterms:qualificationname>Doctor of Philosophy (PhD)</uketdterms:qualificationname>
   <dc:language>eng</dc:language>
   <uketdterms:sponsor>Cambridge Trusts, Cambridge Philosophical Society, Churchill College, European Research Council, Institution of Engineering &amp; Technology (IET), The Armourers and Brasiers' Gauntlet Trust, SuperGen SuperSolar</uketdterms:sponsor>
   <dcterms:isReferencedBy xsi:type="dcterms:URI">https://www.repository.cam.ac.uk/handle/1810/350831</dcterms:isReferencedBy>
   <uketdterms:embargotype>embargo</uketdterms:embargotype>
   <uketdterms:embargodate>2026-06-12</uketdterms:embargodate>
   <dc:identifier xsi:type="dcterms:URI">https://www.repository.cam.ac.uk/bitstreams/9d83c65a-a5e3-4951-9578-4682eba45e25/download</dc:identifier>
   <uketdterms:checksum xsi:type="uketdterms:MD5">035b079255f707604362640ea2e04136</uketdterms:checksum>
   <dcterms:license>https://www.repository.cam.ac.uk/bitstreams/2763acef-106c-429f-8bc2-e1d7877ad93d/download</dcterms:license>
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   <dc:rights>https://www.rioxx.net/licenses/all-rights-reserved/</dc:rights>
   <dc:subject>Halide perovskites</dc:subject>
   <dc:subject>Lead-tin perovskites</dc:subject>
   <dc:subject>perovskite optoelectronics</dc:subject>
   <dc:subject>Perovskite solar cells</dc:subject>
   <dc:subject>Perovskite field effect transistors</dc:subject>
</uketd_dc:uketddc>
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