<?xml version="1.0" encoding="UTF-8"?><?xml-stylesheet type="text/xsl" href="static/style.xsl"?><OAI-PMH xmlns="http://www.openarchives.org/OAI/2.0/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/ http://www.openarchives.org/OAI/2.0/OAI-PMH.xsd"><responseDate>2026-09-24T02:35:05Z</responseDate><request verb="GetRecord" identifier="oai:www.repository.cam.ac.uk:1810/343921" metadataPrefix="uketd_dc">https://api.repository.cam.ac.uk/server/oai/request</request><GetRecord><record><header><identifier>oai:www.repository.cam.ac.uk:1810/343921</identifier><datestamp>2023-12-22T13:41:28Z</datestamp><setSpec>com_1810_198332</setSpec><setSpec>com_1810_256064</setSpec><setSpec>col_1810_214775</setSpec></header><metadata><uketd_dc:uketddc xmlns:uketd_dc="http://naca.central.cranfield.ac.uk/ethos-oai/2.0/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:dcterms="http://purl.org/dc/terms/" xmlns:uketdterms="http://naca.central.cranfield.ac.uk/ethos-oai/terms/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:doc="http://www.lyncode.com/xoai" xsi:schemaLocation="http://naca.central.cranfield.ac.uk/ethos-oai/2.0/ http://naca.central.cranfield.ac.uk/ethos-oai/2.0/uketd_dc.xsd">
   <dc:title>The Hall Effect for Probing Conjugated Polymer Charge Transport in High Carrier Density Regimes</dc:title>
   <dc:identifier xsi:type="dcterms:DOI">10.17863/CAM.91345</dc:identifier>
   <dc:creator>Wood, William</dc:creator>
   <uketdterms:advisor>Sirringhaus, Henning</uketdterms:advisor>
   <dcterms:abstract>Conjugated polymer semiconductors hold much promise when it comes to their potential
for novel applications. Their ability to form uniform films from solution is generally
thought to be of high value to industry, opening up the possibilities promised by large
area electronics manufacturing.

Probing charge transport in these materials often proves difficult. Hall effect mea-
surements, a mainstay of semiconductor characterisation in more traditional materials,
provide anomalous results when used on polymers. This often leads to inaccurate
claims being made off the back of erroneously interpreted Hall data and, in some cases,
missing out on interesting physics that gets “screened out” of the Hall effect in these
materials.

It is for these reasons that a means of both efficiently acquiring and properly
interpreting Hall data in polymers was sought. This thesis recounts the creation
of a new AC system for measuring the Hall effect in shorter time spans than those
required by superconducting electromagnet systems. This is followed by a series of
measurements and analysis, leading to the construction of a new model for describing
how the Hall coefficient in these materials varies with temperature, and allowing for
multiple interesting parameters to be determined.

This model is built around a central concept of different carriers in a polymer
system having different degrees of average coupling, g, to a magnetic field. This is
assumed to be described by a statistical distribution characterised by its average value,
⟨g⟩. This, and other parameters that can be extracted from this modelling, are an
exciting prospect for areas of research involving material optimisation. Insights into the
average degree of delocalisation of carriers, relative levels of energetic disorder as well
as hopping dimensionality can all theoretically be determined. This is in addition to
the traditional quantities typically extracted from Hall measurements: mobile charge
carrier density and mobility.

By performing these analyses on data measured from ion-exchange doped PBTTT,
P3HT and IDT-BT, as well as electrochemically gated DPP-BTz, several interesting
results were determined. These include values, such as the hopping temperature
coefficient for PBTTT, that indicated these polymer systems exhibit a greater amount
of energetic order when they are doped. Similarly, for PBTTT, it has been shown that
the overall degree of delocalisation of carriers increases for greater doping levels. The
most highly-doped PBTTT device was also found to exhibit diminishing returns on
conductivity enhancement with greater carrier densities, owing to decreasing mobilities.
This suggests that it approaches a limit on conductivity through increased doping
alone, while independent, spectroscopic carrier-density measurements suggest this is
occurring at a near-100% level of doping efficiency.

Measurements on the less conductive systems proved to be more difficult, and led
to many of them not being able to be fully fit. However, some useful insights were still
gained. DPP-BTz was observed to change from p-type to n-type transport when doped
highly enough. Beyond this, its conductivity would also start to decrease the further
into this n-type regime the doping went. It was therefore concluded that the limit
of one carrier per monomer unit must have been reached and exceeded, causing the
band to no-longer be limited by hole transport. This similarly suggested that at high
gate voltages, DPP-BTz Organic Electrochemical Transistor (OECT) devices were also
capable of achieving near-100% doping efficiencies.

Perhaps the most intriguing result of all is the promise the model and analyses
in this thesis hold. While much analysis was limited by the number of data points
available in many cases, as well as the quality of the data in some cases, it nonetheless
showed that it is possible to extract useful information from the Hall effect in these
materials when treated carefully. Future work can therefore focus on using these tools
to analyse better and denser data, enabling it to use the findings in this thesis as a
tool in the drive forward to optimise these polymer systems, thus perhaps enabling
their use across their many potential applications.</dcterms:abstract>
   <uketdterms:institution>University of Cambridge</uketdterms:institution>
   <dcterms:issued>2022-03-07</dcterms:issued>
   <dc:type>Thesis</dc:type>
   <uketdterms:qualificationlevel>Doctoral</uketdterms:qualificationlevel>
   <uketdterms:qualificationname>Doctor of Philosophy (PhD)</uketdterms:qualificationname>
   <dc:language>eng</dc:language>
   <dcterms:isReferencedBy xsi:type="dcterms:URI">https://www.repository.cam.ac.uk/handle/1810/343921</dcterms:isReferencedBy>
   <dc:identifier xsi:type="dcterms:URI">https://apollo8-f-pro.lib.cam.ac.uk/bitstreams/3e321d17-35a5-493a-89a8-ee543d30836f/download</dc:identifier>
   <uketdterms:checksum xsi:type="uketdterms:MD5">affbe68951c8edd6f74c205cdb7d2d64</uketdterms:checksum>
   <dc:rights>https://www.rioxx.net/licenses/all-rights-reserved/</dc:rights>
   <dc:subject>Charge Transport</dc:subject>
   <dc:subject>DPP-BTz</dc:subject>
   <dc:subject>Hall Effect</dc:subject>
   <dc:subject>IDT-BT</dc:subject>
   <dc:subject>Measurement Automation</dc:subject>
   <dc:subject>Modelling</dc:subject>
   <dc:subject>P3HT</dc:subject>
   <dc:subject>PBTTT</dc:subject>
   <dc:subject>Physics</dc:subject>
   <dc:subject>Polymers</dc:subject>
   <dc:subject>Semiconductors</dc:subject>
</uketd_dc:uketddc>
</metadata></record></GetRecord></OAI-PMH>