Sample Set A
Description: Variation in epilayer growth temperature


AFM data: RMS roughness (Figure 3 (a))
Temperature	RMS roughness	ERROR
°C	nm	nm
830	12.15	0.4
845	10.52	0.11
860	8.01	0.39
880	8.37	0.37
895	22.19	0.64
910	75.33	8.71


AFM data: Feature size extracted from AFM measurements (Figure 3 (b))
Temperature	Feature size (para)	ERROR	Feature size (perp)	ERROR
°C	µm	µm	µm	µm
830	0.46723	0.0532	2.56505	0.09535
845	0.45305	0.01656	2.43231	0.0936
860	0.4979	0.02512	1.99088	0.12448
880	0.79127	0.06375	1.60183	0.08156
895	1.27829	0.11843	1.69933	0.13847
910	1.40441	0.21112	1.70227	0.16078


XRD phase analysis:  (Figure 5 (a))
The relative portion of the zincblende GaN phase, wurtzite GaN phase and highly defective material have been extracted from XRD intensity profiles of the 113 and 1-103 reflections. These profiles have been fitted by three Pseudo-Voigt functions.

Temperature	zincblende	wurtzite	mixed	mixed & wurtzite
°C	I(1-13)	I(1-103)	I(mix)	I(1-103) + I(mix)
 830	99.81	0.14	0.05	0.19
845	98.44	0.79	0.77	1.56
860	99.04	0.44	0.52	0.96
880	97.68	1.19	1.13	2.32
895	95.38	2.15	2.46	4.61
910	91.79	4.9	3.31	8.21


XRD w-Rocking curves FWHM (Figure 5 (b))
Temperature	FWHM (para)	FWHM (perp)
°C	arcmin	arcmin
830	74.07	52.34
845	77.45	62.03
860	61.58	48.89
880	47.53	37.73
895	43.878	37.24
910	37.64	32.31