Sample Set B
Description: Variation in V/III ratio during epilayer growth


AFM data: RMS roughness (Figure 8 (a))
V/III	RMS roughness	ERROR
1	nm	nm
15	19.05339	0.52155
23	15.30448	0.25429
38	9.69986	0.09264
76	10.58178	1.09033
152	16.2411	1.15952
300	17.32584	1.22446
600	25.32199	1.95377
1200	32.27322	1.10226


AFM data: Feature size extracted from AFM measurements (Figure 8 (b))
V/III	Feature size (para)	ERROR	Feature size (perp)	ERROR
1	µm	µm	µm	µm
15	0.88369	0.06134	1.30827	0.02084
23	0.90853	0.04483	1.21607	0.09013
38	0.67956	0.02296	1.66096	0.04771
76	0.63123	0.05399	2.22717	0.20204
152	0.73255	0.07492	2.78227	0.04791
300	0.75333	0.10592	3.01714	0.18902
600	0.93754	0.06819	1.9962	0.10627
1200	0.99911	0.08365	1.14057	0.03329


XRD phase analysis: (Figure 10 (a))
The relative portion of the zincblende GaN phase, wurtzite GaN phase and highly defective material have been extracted from XRD intensity profiles of the 113 and 1-103 reflections. These profiles have been fitted by three Pseudo-Voigt functions.

V/III	zincblende	wurtzite	mixed	mixed & wurtzite
1	I(1-13)	I(1-103)	I(mix)	I(1-103) + I(mix)
15	99.9	0.04	0.05	0.09
23	96.75	1.29	1.97	3.26
38	97.65	0.98	1.37	2.35
76	95.48	2.14	2.38	4.52
152	89.9	4.36	5.74	10.1
300	91.93	4.73	3.34	8.07
600	80.67	9.53	9.8	19.33
1200	38.68	58.78	2.54	61.32


XRD w-Rocking curves FWHM (Figure 10 (b))
V/III	FWHM (para)	FWHM (perp)
1	arcmin	arcmin
15	32.18	26.48
23	31.74	27.44
38	35.86	31.52
76	38.88	36
152	38.99	35.41
300	38.76	34.54
600	38.96	34.33
1200	46.28	41.36