We present a simple liquid-assisted processing (LAP) method, to be used in situ during pulsed laser deposition growth to give both rapid growth rates (50 Hz deposition leading to >250 nm min⁻¹ with a single plume) and strong pinning (improved ×5–10 at 30 K and below, over plain standard YBCO films grown at similar rates). Achieving these two important features simultaneously has been a serious bottleneck to date and yet for applications, it is critical to overcome it. The new LAP method uses a non-stoichiometric target composition, giving rise to a small volume fraction of liquid phase during film growth. LAP enhances the kinetics of the film growth so that good crystalline perfection can be achieved at up to 60× faster growth rates than normal, while also enabling artificial pinning centres to be self-assembled into fine nanocolumns. In addition, LAP allows for RE mixing (80% of Y with 20% of Yb, Sm, or Yb + Sm), creating effective point-like disorder pinning centres within the rare earth barium cuprate lattice. Overall, LAP is a simple method for use in pulsed laser deposition, and it can also be adopted by other in situ physical or vapour deposition methods (i.e. MOCVD, evaporation, etc) to significantly enhance both growth rate and performance.